issue 2 - april 2008 1 www.zetex.com ? zetex semiconductors plc 2008 ZXTD4591AM832 mpps? miniature package power solutions complementary dual 40v high performance transistor summary npn transistor - v ceo = 40v; r sat = 195m ; i c = 2.5a pnp transistor - v ceo = -40v; r sat = 350m ; i c = -2a description packaged in the 3mm x 2mm mlp (micro leaded package), these high performance npn / pnp combination dual transistors offer lower on state losses making them ideal for use in dc-dc circuits and various driving and power-management functions. users will also gain several other key benefits: ? performance capability equivalent to much larger packages ? improved circuit efficiency & power levels ? pcb area and device placement savings ? lower package height (0.9mm nom) ? reduced component count features ? low saturation voltage (500mv max @1a) ?h fe specified up to 2a ?i c = 2.5a continuous collector current ? 3mm x 2mm mlp applications ? dc - dc converters ? power switches ? motor control ? led backlighting circuits ordering information device marking 91a device reel size (inches) tape width (mm) quantity per reel ZXTD4591AM832ta 7 8 3,000 ZXTD4591AM832tc 13 8 10,000 c1 e1 b1 c2 e2 b2 c2 c2 c1 c1 e2 b2 bottom view e1 b1 1234 8765 npn pnp obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 2 www.zetex.com ? zetex semiconductors plc 2008 absolute maximum ratings thermal resistance notes: (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line in to two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the cent re line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only . (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 500mw. parameter symbol npn pnp unit collector-base voltage v cbo 40 -40 v collector-emitter voltage v ceo 40 -40 v emitter-base voltage v ebo 5-5 v peak pulse current i cm 3-3a continuous collector current (a)(f) i c 2-1.5a continuous collector current (b)(f) i c 2.5 -2.0 a base current i b 300 ma power dissipation at t a =25 c (a)(f) linear derating factor p d 1.5 12 w mw/ c power dissipation at t a =25 c (b)(f) linear derating factor p d 2.45 19.6 w mw/ c power dissipation at t a =25 c (c)(f) linear derating factor p d 1 8 w mw/ c power dissipation at t a =25 c (d)(f) linear derating factor p d 1.13 9 w mw/ c power dissipation at t a =25 c (d)(g) linear derating factor p d 1.7 13.6 w mw/ c power dissipation at t a =25 c (e)(g) linear derating factor p d 3 24 w mw/ c storage temperature range t stg -55 to +150 c junction temperature range t j 150 c parameter symbol value unit junction to ambient (a)(f) r ja 83.3 c/w junction to ambient (b)(f) r ja 51 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 3 www.zetex.com ? zetex semiconductors plc 2008 typical characteristics obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 4 www.zetex.com ? zetex semiconductors plc 2008 npn transistor electrical characteristics (at t amb = 25c unless otherwise stated) . parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo 40 v i c = 100 a collector-emitter breakdown voltage v (br)ceo 40 v i c = 10ma (*) notes: (*) measured under pulsed conditions. emitter-base breakdown voltage v (br)ebo 5 v i e = 100 a collector cut-off current i cbo 100 na v cb =30v emitter cut-off current i ebo 100 na v eb = 4v collector emitter cut- off current i ces 100 nv v ce = 30v collector emitter saturation voltage v ce(sat) 300 500 mv mv i c = 0.5a, i b = 50ma (*) i c = 1a, i b = 100ma (*) base-emitter saturation voltage v be(sat) 1.1 v i c = 1a, i b = 100ma (*) base-emitter turn-on voltage v be(on) 1.0 v i c = 1a, v ce = 5v (*) static forward current transfer ratio h fe 300 300 200 35 900 i c = 1ma, v ce = 5v (*) i c = 0.5a, v ce = 5v (*) i c = 1a, v ce = 5v (*) i c = 2a, v ce = 5v (*) transition frequency f t 150 mhz i c = -50ma, v ce = -10v f = 100mhz output capacitance c obo 10 pf v cb = -10v, f = 1mhz obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 5 www.zetex.com ? zetex semiconductors plc 2008 npn typical characteristics obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 6 www.zetex.com ? zetex semiconductors plc 2008 pnp transistor electrical characteristics (at t amb = 25c unless otherwise stated) . parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo -40 v i c = -100 a collector-emitter breakdown voltage v (br)ceo -40 v i c = -10ma (*) notes: (*) measured under pulsed conditions. emitter-base breakdown voltage v (br)ebo -5 v i e = -100 a collector cut-off current i cbo -100 na v cb = -30v emitter cut-off current i ebo -100 na v eb = -4v collector emitter cut- off current i ces -100 nv v ce = -30v collector emitter saturation voltage v ce(sat) -200 -350 -500 mv mv mv i c = -0.1a, i b = -1ma (*) i c = -0.5a, i b = -20ma (*) i c = -1a, i b = -100ma (*) base-emitter saturation voltage v be(sat) -1.1 v i c = -1a, i b = -50ma (*) base-emitter turn-on voltage v be(on) -1.0 v i c = -1a, v ce = -5v (*) static forward current transfer ratio h fe 300 300 250 160 30 800 i c = -1ma, v ce = -5v (*) i c = -0.1a, v ce = -5v (*) i c = -0.5a, v ce = -5v (*) i c = -1a, v ce = -5v (*) i c = -2a, v ce = -5v (*) transition frequency f t 150 mhz i c = -50ma, v ce = -10v f = 100mhz output capacitance c obo 10 pf v cb = -10v, f = 1mhz obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 7 www.zetex.com ? zetex semiconductors plc 2008 pnp electrical characteristics obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 8 www.zetex.com ? zetex semiconductors plc 2008 package outline mlp832 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a 0.80 1.00 0.0315 0.0394 e 0.65 bsc 0.0256 bsc a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 bsc a2 0.65 0.75 0.0256 0.0295 e2 0.43 0.63 0.017 0.0248 a3 0.15 0.25 0.006 0.0098 e4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.0095 0.0134 l 0.20 0.45 0.0079 0.0177 b1 0.17 0.30 0.0068 0.0118 l2 0.00 0.125 0.00 0.005 d 3.00 bsc 0.118 bsc r 0.075 bsc 0.0029 bsc d2 0.82 1.02 0.0323 0.0402 0 12 0 12 d3 1.01 1.21 0.0398 0.0476 - - - - - obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 9 www.zetex.com ? zetex semiconductors plc 2008 obsolete - please use zxtc4591amc
ZXTD4591AM832 issue 2 - april 2008 10 www.zetex.com ? zetex semiconductors plc 2008 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2008 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and condi tions and prices, please contact your nearest zetex sales off ice. quality of product zetex is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts dire ctly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork zetex semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance zetex semiconductors is committed to environ mental excellence in all aspects of its op erations which includes meeting or exceed ing reg- ulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to red uce the use of hazardous substances and/or emissions. all zetex components are compliant with the ro hs directive, and through this it is supporting its customers in their compliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice. obsolete - please use zxtc4591amc
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